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Same model may have multiple batches, images only for reference.
RN1905FE,LF(CT Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1905FE,LF(CT

Part No RN1905FE,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 100mW
Mounting SMD (SMT)
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Base Product Number RN1905
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1314603-RN1905FE,LF(CT
Ultra Librarian 3D Model Ultra Librarian RN1905FE,LF(CT CAD Model

Description

The RN1905FE,LF(CT transistor array from Toshiba Semiconductor and Storage is a 2 NPN pre-biased dual transistor that is designed to be used in various applications.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Product Name: RN1905FE,LF(CT
  • Transistor Type: 2 NPN Pre-Biased Dual Transistor
  • Power: 100mW
  • Collector Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 100mA
  • Transistor Type: Bipolar Junction Transistor (BJT)
  • Frequency Transition: 250MHz
  • Package Includes: SOT-563 and SOT-666
  • Device Package: ES6
  • ECCN Rating: EAR99
  • Resistor-Base: 2.2kOhms
  • Resistor-Emitter Base: 47kOhms

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