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RJK4532DPD-00#J2

Part No RJK4532DPD-00#J2
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 450V 4A MP3A / Trans MOSFET N-CH 450V 4A 3-Pin(2+Tab) MP-3A T/R
Datasheet
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Rohs State rohs
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 450V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate Charge (Qg) (Maximum) @ Vgs 9nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 280pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 40.3W (Tc)
Rds On (Maximum) @ Id, Vgs 2.3 Ohm @ 2A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package MP-3A
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 793228-RJK4532DPD-00#J2
Popularity Medium
Supply and Demand Status Limited
Family Name RJK4532DPD
Introduction Date February 26, 2012
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian RJK4532DPD-00#J2 CAD Model

Description

The RJK4532DPD-00#J2 from Renesas is a MOSFET technology-based device that comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

  • Drain Source Voltage: 450V
  • Gate Charge (Qg): 9nC @ 10V
  • Input Capacitance (Ciss): 280pF @ 25V
  • Power Dissipation (Maximum): 40.3W (Tc)
  • Current - Continuous Drain (Id): 4A (Ta)
  • Rds On (Maximum) @ Id, Vgs: 2.3 Ohm @ 2A, 10V
  • Application: discrete semiconductor
  • Estimated EOL Date: 2022

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