The 2SD867 is a silicon NPN triple diffused planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for use in high-voltage switching applications, particularly in color TV vertical output stages and similar high-power, high-voltage circuits.

Applications:

• Color TV vertical output stages
• High-voltage switching regulators
• Inverter circuits
• Motor control circuits
• High-voltage power amplifiers

Features:

• High Breakdown Voltage: Specifically designed for high-voltage operation.
• High Power Dissipation: Capable of handling significant power.
• Fast Switching Speed: Offers relatively fast switching times for efficient operation.
• Triple Diffused Planar Structure: Enhances voltage withstanding capabilities and reliability.

Benefits:

• Reliable High-Voltage Operation: Designed for stable performance in high-voltage environments.
• Efficient Power Handling: Can effectively dissipate significant power without overheating.
• Reduced Switching Losses: Fast switching speed minimizes power loss during switching transitions.
• Long-Term Stability: Robust construction ensures reliable performance over time.

Additional Details:

The 2SD867 is typically packaged in a TO-3P(N) or similar high-power package. Key electrical characteristics include a collector-emitter voltage (VCEO) of approximately 1500V, a collector current (IC) of about 5A, and a power dissipation (PC) of around 80W. The transition frequency (fT) is typically in the MHz range, indicating its capability for reasonably fast switching. It is important to consult the datasheet for specific operating conditions, safe operating area (SOA), and absolute maximum ratings to prevent damage to the transistor and ensure reliable operation. This is a high-voltage, high-power NPN transistor typically used where high breakdown voltages and large collector currents are required.

Due to its high-voltage capabilities, the 2SD867 is also suitable for use in high-voltage power supplies and industrial applications where precise control of high voltages is necessary. Its robust design ensures stable performance in demanding environments.