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2SJ2713-GR-TE85.F

Part No 2SJ2713-GR-TE85.F
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 158499-2SJ2713-GR-TE85.F
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SJ2713-GR-TE85.F CAD Model

Description

2SJ2713-GR-TE85.F

The 2SJ2713-GR-TE85.F is a highly efficient P-channel MOSFET transistor, perfect for modern electronic applications requiring compact design and reliable performance. This component offers a high degree of versatility, suitable for both development and production phases.


Features and Benefits

  • Enhanced Thermal Efficiency: Maintains performance integrity in high-temperature conditions, offering reliability for continuous operation.
  • Fast Switching Speeds: Optimizes response time for immediate reaction in digital circuits.
  • Low Gate Charge: Reduces the power consumption of the overall system, ideal for battery-operated devices.
  • Stable Performance: Precision-engineered to deliver consistent outcomes in varied environments.

Applications

  • Chargers and adapters
  • Portable electronics
  • Level shifter circuits
  • Relay drivers
  • Consumer electronics

Additional Details

This MOSFET's small size does not compromise its power handling capabilities, making it a go-to choice for design engineers looking to save space without sacrificing efficiency. The 2SJ2713-GR-TE85.F is further characterized by its low drain-source resistance, making it the ideal solution for energy-conscious projects that necessitate minimal electrical resistance. Its implementation in everyday electronics and high-frequency switching applications highlights its adaptability and high performance.

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