The 2SK1379 is an N-channel silicon MOSFET designed for radio frequency (RF) amplifier applications, manufactured by Toshiba Semiconductor and Storage. It is optimized for high-frequency performance and is often used in various communication and broadcasting equipment.

Applications

• RF Amplifiers: Used in pre-amplifiers and power amplifiers for RF signals.
• VHF/UHF Transmitters: Employed in the output stages of VHF and UHF transmitters.
• Communication Equipment: Integrated in communication devices requiring high-frequency amplification.
• Broadcasting Equipment: Used in TV and radio broadcasting transmitters.
• Radar Systems: Applied in radar systems for signal amplification.

Features

• N-channel MOSFET: Offers efficient amplification of RF signals.
• High Transconductance: Provides excellent gain characteristics.
• Low Input Capacitance: Minimizes signal loss and improves frequency response.
• High Power Gain: Enables efficient power amplification in RF circuits.
• Excellent Linearity: Ensures low distortion in amplified signals.

Benefits

• High-frequency Performance: Optimized for use in RF applications.
• Efficient Amplification: Provides reliable and efficient signal amplification.
• Low Distortion: Ensures accurate reproduction of RF signals.
• Stable Operation: Designed for stable and consistent performance.
• Versatile Use: Suitable for a wide range of RF amplifier applications.

Additional Details

The 2SK1379 features a drain-source voltage (VDSS) of 30V, a drain current (ID) of 1.5A, and a total power dissipation (PD) of 7W. It has a typical forward transconductance (gfs) of 20 mS. Its operating junction temperature range is -55°C to +150°C. It comes in a small surface mount package. It is often used in low-power RF amplifier circuits.