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2SK2038

Part No 2SK2038
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS) / Trans MOSFET N-CH Si 800V 5A 3-Pin S-Mini
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 159258-2SK2038
Popularity Medium
Supply and Demand Status Limited
Family Name 2SK2038
Introduction Date August 12, 2004
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian 2SK2038 CAD Model

Description

Overview

The 2SK2038 is a high-efficiency N-channel MOSFET that is designed to handle demanding power applications with ease. Known for its excellent switching characteristics and low voltage operation, this MOSFET is ideal for use in a variety of both commercial and industrial technologies.

Features and Benefits

  • Low voltage operation: Efficient in managing low power applications while maintaining high performance.
  • Fast switching speeds: Supports quick frequency adaptation without compromising stability.
  • Minimal power loss: Maintains efficiency through low on-state resistance.
  • Robust construction: Engineered to perform under various thermal and electrical stresses.

Applications and Projects

  • Renewable energy systems
  • Electric vehicle components
  • High-efficiency lighting systems
  • Power factor correction circuits
  • Industrial electrical equipment

Integrating the 2SK2038 into your systems guarantees consistent efficiency and reliability, essential for critical power management applications. It offers excellent performance metrics that ensure both durability and cost-effectiveness.

Additional Details

The 2SK2038 is manufactured in compliance with the highest industry standards, ensuring each component offers peak performance. The MOSFET is supported by a detailed datasheet, providing all necessary specifications to aid in the successful implementation in high-demand circuits.

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