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2SK2312

Part No 2SK2312
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) / Trans MOSFET N-CH Si 60V 45A 3-Pin(3+Tab) TO-220NIS
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 159412-2SK2312
Popularity Medium
Supply and Demand Status Limited
Family Name 2SK2312
Introduction Date January 12, 1998
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SK2312 CAD Model

Description

The 2SK2312 is a robust N-channel MOSFET that features high-efficiency performance and is perfect for applications where consistent electrical performance is a necessity. This transistor is crafted to offer long-term reliability across an extensive range of circuit designs.

Features and Benefits

  • Exceptional On-State Performance: Designed for low on-state resistance, reducing power loss during operation.
  • Heat Management: Offers superior thermal management capabilities to handle extreme operational conditions.
  • Enhanced Durability: Manufactured for high durability, providing an extended service life.
  • Cost-Efficiency: Balances performance with cost, making it an economical choice for many projects.

Applications and Projects

  • Power Management Solutions: Critical in designing efficient power systems and converters.
  • Automated Equipment: Plays a key role in managing electrically powered machinery with precision.
  • Energy Storage Systems: Ensures efficient electrical management in applications like lithium-ion battery systems.
  • Smart Home Devices: Used in devices that require consistent power delivery without interruption.

The 2SK2312 marks an ideal candidate for engineers focused on building next-generation electronic devices requiring reliable and efficient power management properties.

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