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Same model may have multiple batches, images only for reference.
2SK2376(Q)
Same model may have multiple batches, images only for reference.

2SK2376(Q)

Part No 2SK2376(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 45A TO220FL
Datasheet
2SK2376(Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3350pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 17 mOhm @ 25A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FL
Dimension TO-220-3, Short Tab
Win Source Part Number 1004708-2SK2376(Q)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SK2376(Q) CAD Model

Description

The Toshiba Semiconductor and Storage 1004708-2SK2376(Q) is a medium popularity electronic component that is designed to offer high performance.

  • Technology: MOSFET
  • Drain-Source Breakdown Voltage: 60V
  • Suitable for: Use in various electronic applications and can be relied upon to deliver high performance

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