The 2SK3561(STA4.Q) is an N-channel MOS field-effect transistor (MOSFET) from Toshiba Semiconductor and Storage. This RF MOSFET is designed for high-frequency applications requiring low noise and high gain. Its advanced design ensures excellent performance in demanding RF circuits.

Applications

• RF amplifiers
• High-frequency oscillators
• Mobile communication devices
• Wireless LAN systems
• Satellite communication equipment

Features

• N-Channel MOSFET
• High power gain
• Low noise figure
• High transconductance
• Surface mount package

Benefits

• Improved signal amplification
• Reduced noise in RF systems
• Enhanced overall system performance
• Easy integration into compact designs due to its surface mount package
• Stable operation in high-frequency environments

Additional Details

The 2SK3561(STA4.Q) operates with a gate-source voltage (VGS) and drain-source voltage (VDS). It features a low gate capacitance, which contributes to its high-frequency performance. The device's thermal resistance is optimized to ensure stable operation even under high power dissipation. This MOSFET is manufactured using Toshiba's advanced process technology, ensuring high reliability and consistent performance. The STA4.Q designation refers to specific electrical characteristics and quality control standards applied during manufacturing. This part is commonly used in the front-end stages of RF receivers and transmitters.