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Same model may have multiple batches, images only for reference.
2SK3662(F) Real Image
Same model may have multiple batches, images only for reference.

2SK3662(F)

Part No 2SK3662(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET N-CH 60V 35A TO220NIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Part Status Obsolete (End Of Life)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) at 25°C 35A
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Maximum) at Id, Vgs 12.5mOhm at 18A, 10V
Vgs(th) (Maximum) at Id 2.5V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 91nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5120pF at 10V
Power Dissipation (Maximum) 35W (Tc)
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220NIS
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803186-2SK3662(F)
Ultra Librarian 3D Model Ultra Librarian 2SK3662(F) CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET (Metal Oxide) component is a N-Channel FET type product.

  • Drain to Source Voltage: 60V
  • Part Status: Obsolete (End Of Life)
  • Supplier Device Package: TO-220NIS
  • Drive Voltage: 4V and 10V
  • Operating Temperature: 150°C
  • Power Dissipation: 35W (Tc)

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705+ $0.4932 $347.7060
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