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2SK673

Part No 2SK673
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1037853-2SK673
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK673 CAD Model

Description

The 2SK673 is an N-channel MOS field-effect transistor designed for high-frequency amplifier applications. Manufactured by Toshiba Semiconductor and Storage, this MOSFET is specifically optimized for VHF/UHF circuits requiring high gain and low noise.

Applications

  • VHF/UHF Amplifiers
  • CATV Amplifiers
  • Satellite Broadcasting Systems
  • Wireless Communication Equipment
  • Mobile Communication Devices

Features

  • N-Channel MOSFET
  • High Power Gain
  • Low Noise Figure
  • High Cut-off Frequency
  • Excellent Linearity
  • Small Signal Amplifier

Benefits

  • Improved RF Performance: The 2SK673 enables designers to achieve higher gain and lower noise in RF amplifiers, enhancing the overall system performance.
  • Enhanced Signal Quality: Its low noise figure improves the signal-to-noise ratio, leading to clearer and more reliable communication.
  • Versatile Application: Suitable for a variety of high-frequency applications, including VHF/UHF amplifiers, CATV systems, and wireless communication devices.
  • Compact Design: Its design allows for compact circuit layouts, making it ideal for space-constrained applications.
  • Stable Operation: Designed for stable performance across a wide range of operating conditions, ensuring consistent results in demanding applications.

Technical Specifications

The 2SK673 generally features a drain-source voltage (VDS) of 20V, a gate-source voltage (VGS) of ±10V, and a drain current (ID) of 30mA. It has a power dissipation of 200mW. The operating junction temperature range spans from -55°C to +150°C. It's available in a small signal package, suitable for automated assembly. The gate threshold voltage is typically around 1.2V. The device exhibits high cut-off frequency characteristics, suitable for high-frequency applications. It also complies with RoHS standards.

The 2SK673 is particularly useful in the front-end stages of RF receivers where low noise and high gain are critical. Its characteristics make it an excellent choice for enhancing signal reception and amplification in communication systems.

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