The 3SK126-O(TE85R,F) is an N-channel dual gate MOS field-effect transistor (MOSFET) designed for high-frequency applications. Manufactured by Toshiba Semiconductor and Storage, this transistor is optimized for use in RF amplifiers, mixers, and oscillators.

Applications

• RF amplifiers
• Mixers in communication equipment
• Oscillators
• High-frequency tuners
• Spectrum analyzers
• Signal generators

Features

• N-channel dual gate MOSFET structure
• High forward transfer admittance (high gain)
• Low feedback capacitance
• Low noise figure
• High power gain at high frequencies
• Surface mount package

Benefits

• Provides high gain and low noise amplification for sensitive RF signals
• Reduces signal distortion and improves overall system performance
• Simplifies circuit design with its dual-gate configuration, allowing for gain control and improved stability
• Enables miniaturization of electronic devices due to its small surface mount package

Additional Details

The ‘O’ in the part number often denotes the ranking or specific characteristics of the device. The (TE85R,F) portion indicates the packaging and taping specification for automated assembly. Key specifications include drain-source voltage, gate-source voltage, drain current, forward transfer admittance (Yfs), input capacitance, output capacitance, and noise figure. The dual-gate structure allows for separate control of gain and signal level, making it suitable for AGC (Automatic Gain Control) circuits. It is designed for low-voltage operation. Its construction materials are selected for high-frequency performance and reliability.