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DF2B6.8E,L3F(T

Part No DF2B6.8E,L3F(T
Manufacturer Toshiba Semiconductor and Storage
Catalog TVS - Diodes
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1445+
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 737875-DF2B6.8E,L3F(T
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DF2B6.8E,L3F(T CAD Model

Description

The Toshiba DF2B6.8E,L3F(T is a transient voltage suppressor (TVS) diode designed to protect sensitive electronic components from voltage surges and electrostatic discharge (ESD). This diode is part of Toshiba's extensive lineup of protection devices, offering robust performance and reliability in a compact package.

Applications

  • Mobile Devices: Protection against ESD in smartphones, tablets, and other portable electronics.
  • Data Lines: Safeguarding data transmission lines in computers, peripherals, and communication equipment.
  • Automotive Electronics: Protecting sensitive circuits in automotive control systems and infotainment units.
  • Industrial Equipment: Providing surge protection for industrial control systems and automation equipment.
  • Consumer Electronics: Protecting various circuits in TVs, set-top boxes, and other consumer devices.

Features

  • Low Clamping Voltage: Provides effective protection by limiting the voltage to a safe level during surge events.
  • Fast Response Time: Quickly responds to transient voltage surges to minimize the risk of damage to protected components.
  • Small Package Size: Compact design allows for easy integration into space-constrained applications.
  • High Surge Current Capability: Withstands high surge currents without degradation or failure.
  • RoHS Compliant: Complies with Restriction of Hazardous Substances (RoHS) directive.

Benefits

  • Enhanced System Reliability: Protects sensitive components from damage due to voltage surges and ESD.
  • Improved Product Lifespan: Extends the lifespan of electronic devices by preventing damage from transient events.
  • Reduced Downtime: Minimizes downtime and maintenance costs by preventing component failures.
  • Space-Saving Design: Compact package allows for easy integration into small form-factor devices.
  • Environmentally Friendly: RoHS compliance ensures that the device is free from hazardous substances.

Additional Details

The Toshiba DF2B6.8E,L3F(T TVS diode typically features a breakdown voltage of around 6.8V. The specific clamping voltage and surge current capability are detailed in the product datasheet. It's often packaged in a small SMD (Surface Mount Device) package for easy PCB assembly. The “L3F(T” suffix usually indicates specific packaging and tape reel options. This diode is designed to meet industry standards for ESD and surge immunity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,140+ $0.0508 $57.9120
2,780+ $0.0416 $115.6480
4,290+ $0.0404 $173.3160
5,885+ $0.0393 $231.2805
7,580+ $0.0381 $288.7980
10,000+ $0.0347 $347.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,400 pieces
MOQ: 1140 pcs
Order Increment : 1 pcs
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