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GT50J121

Part No GT50J121
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description IGBT 600V 50A 240W TO3P LH
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 50A
Pulsed Collector Current 100A
Collector-emitter saturation voltage(Max) 2.45V @ 15V, 50A
Maximum Power Dissipation 240W
Total Switching Energy(Ets) 1.3mJ (on), 1.34mJ (off)
Input Type Standard
Turn-on and Turn-off delay time 90ns/300ns
Testing Conditions 300V, 50A, 13 Ohm, 15V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P(LH)
Win Source Part Number 204503-GT50J121
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian GT50J121 CAD Model

Description

The Toshiba GT50J121 is a through hole mounting IGBT transistor designed for use in discrete semiconductor products.

  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 50A
  • Maximum Power Dissipation: 240W
  • Pulsed Collector Current: 100A
  • Collector-Emitter Saturation Voltage: 2.45V @ 15V and 50A
  • Total Switching Energy: 1.3mJ (on) / 1.34mJ (off)
  • Turn-On/Turn-Off Delay Time: 90ns / 300ns
  • Testing Conditions: 300V, 50A, 13 Ohm, 15V

Supply and demand status is limited due to its obsolete(EOL) status.

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