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Same model may have multiple batches, images only for reference.
GT60M323 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

GT60M323

Part No GT60M323
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family IGBTs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 269864-GT60M323
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian GT60M323 CAD Model

Description

The GT60M323 is an insulated gate bipolar transistor (IGBT) manufactured by Toshiba Semiconductor and Storage.

  • Suitable for: Discrete semiconductor products
  • Popularity: Medium

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Quantity Unit Price Ext. Price
1+ $91.5788 $91.5788
2+ $88.7167 $177.4334
3+ $85.8558 $257.5674
4+ $82.9937 $331.9748
5+ $74.4074 $372.0370
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