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Same model may have multiple batches, images only for reference.
HN1A01F-GR(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

HN1A01F-GR(TE85L,F)

Part No HN1A01F-GR(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 50V 0.15A SM6
Datasheet
HN1A01F-GR(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 300mW
Frequency - Transition 80MHz
Mounting Style SMD/SMT
Package SC-74, SOT-457
Manufacturer Device Package SM6
Win Source Part Number 001669-HN1A01F-GR(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HN1A01F-GR(TE85L,F) CAD Model

Description

The Toshiba HN1A01F-GR(TE85L,F) is a bipolar transistor array that is designed for use in various applications. This device is packaged in a reel and has an SMD/SMT mounting style. The HN1A01F-GR(TE85L,F) features a SC-74, SOT-457 package with an SM6 manufacturer device package. With a maximum power of 300mW and a voltage collector emitter breakdown of 50V, this device is capable of delivering high performance. The DC current gain (hFE) at Ic, Vce is 200 at 2mA, 6V, and the frequency transition is 80MHz.

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Quantity Unit Price Ext. Price
810+ $0.0716 $57.9960
1,965+ $0.0589 $115.7385
3,000+ $0.0578 $173.4000
4,170+ $0.0554 $231.0180
5,320+ $0.0543 $288.8760
7,145+ $0.0485 $346.5325
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Availability: 3,000 pieces
MOQ: 810 pcs
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