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Same model may have multiple batches, images only for reference.
HN1A01F-Y(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

HN1A01F-Y(TE85L,F)

Part No HN1A01F-Y(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 50V 0.15A SM6
Datasheet
HN1A01F-Y(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 300mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 2mA, 6V
Maximum Power Dissipation 300mW
Frequency - Transition 80MHz
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package SM6
Win Source Part Number 001672-HN1A01F-Y(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HN1A01F-Y(TE85L,F) CAD Model

Description

This electronic component is a product of Toshiba Semiconductor and Storage. It is a dual PNP transistor with a frequency transition of 80MHz. The product is categorized under Discrete Semiconductor Products and is currently active in the market. The temperature range for operating the device is up to 125°C (TJ). It has a maximum collector current of 150mA and a maximum collector-emitter breakdown voltage of 50V. The supply and demand status is sufficient.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $17.2592 $69.0368
9+ $14.1615 $127.4535
13+ $13.7191 $178.3483
18+ $13.2767 $238.9806
23+ $12.8344 $295.1912
31+ $11.5061 $356.6891
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Availability: 15,700 pieces
MOQ: 4 pcs
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