The Toshiba Semiconductor and Storage 001680-HN1B04FE-GR,LF is a NPN/PNP transistor with a maximum collector-emitter breakdown voltage of 50V and a maximum current collector of 150mA. This transistor has a collector cut-off current of 100nA and a typical gain of 200 at 2mA and 6V. The transistor is designed for use in discrete semiconductor products and operates at a temperature range of up to 150°C. The ES6 case/package of the transistor makes it ideal for surface mount technology (SMT) mounting. The transistor has a maximum power dissipation of 100mW and a low collector-emitter saturation voltage of 250mV at 10mA and 100mA.