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HN1B04FU-Y(T5L,F,T)

Part No HN1B04FU-Y(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 50V 0.15A US6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel(TR)
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V
Power - Max 200mW
Frequency - Transition 150MHz
Mounting Style SMD/SMT
Package 6-TSSOP, SC-88, SOT-363
Manufacturer Device Package US6
Win Source Part Number 001682-HN1B04FU-Y(T5L,F,T)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HN1B04FU-Y(T5L,F,T) CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and comes under the category of Discrete Semiconductor Products. The product belongs to the family of Transistors - Bipolar (BJT) - Arrays. The product is packaged in Reel(TR) and has a mounting style of SMD/SMT. The package includes 6-TSSOP, SC-88, SOT-363 and the manufacturer device package is US6. The maximum power of the product is 200mW and the maximum voltage is 50V. The maximum collector current is 150mA. The supply and demand status of the product is sufficient.

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