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HN1C01FE-GR,LF

Name: HN1C01FE-GR,LF
Brand: Toshiba Semiconductor and Storage
SKU: 147199
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	HN1C01FE-GR,LF
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Arrays
Description	TRANS 2NPN 50V 0.15A ES6
Datasheet	HN1C01FE-GR,LF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Active
Transistor Polarity	2 NPN (Dual)
Maximum Current Collector	150mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Max Vce (sat)	250mV @ 10mA, 100mA
Collector Cut-off Current(Max)	100nA (ICBO)
Typical Gain (hFE) (Min)	200 @ 2mA, 6V
Maximum Power Dissipation	100mW
Frequency - Transition	80MHz
Temperature Range - Operating	150°C (TJ)
Mounting	SMD (SMT)
Case / Package	ES6
Win Source Part Number	001684-HN1C01FE-GR,LF
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian HN1C01FE-GR,LF CAD Model

Alternative Products

Description

The HN1C01FE-GR,LF from Toshiba Semiconductor and Storage is a dual NPN transistor that has a maximum collector-emitter breakdown voltage of 50V. It has a maximum current collector of 150mA and a collector cut-off current of 100nA. This transistor has a typical gain of 200 at 2mA and 6V. It has a maximum power dissipation of 100mW and is available in an ES6 package. The supply and demand status of this product is sufficient.

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
1,565+	$0.0370	$57.9050
3,850+	$0.0300	$115.5000
5,770+	$0.0300	$173.1000
8,000+	$0.0289	$231.2000
10,420+	$0.0277	$288.6340
13,640+	$0.0254	$346.4560

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 51,400 pieces

MOQ: 1565 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
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