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Same model may have multiple batches, images only for reference.
HN3C10FUTE85LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

HN3C10FUTE85LF

Part No HN3C10FUTE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description TRANSISTOR NPN US6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Gain 11.5dB
Maximum Power Dissipation 200mW
Typical Gain (hFE) (Min) 80 @ 20mA, 10V
Maximum Current Collector 80mA
Mounting SMD (SMT)
Case / Package US6
Win Source Part Number 1043899-HN3C10FUTE85LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HN3C10FUTE85LF CAD Model

Description

The HN3C10FUTE85LF is a medium popularity dual NPN transistor manufactured by Toshiba Semiconductor and Storage.

  • Gain: 11.5dB
  • Frequency transition: 7GHz
  • Maximum power dissipation: 200mW

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