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Same model may have multiple batches, images only for reference.
K13A65U Real Image
Same model may have multiple batches, images only for reference.

K13A65U

Part No K13A65U
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 13A TO-220SIS
Datasheet
K13A65U Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 950pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 6.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 070338-K13A65U
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian K13A65U CAD Model

Description

This electronic component is a MOSFET from the manufacturer Toshiba Semiconductor and Storage. It has a maximum power dissipation of 40W and a drain-source breakdown voltage of 650V.

  • Continuous Drain Current @ 25°C: 13A
  • Gate-Source Threshold Voltage: 5V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 380 mOhm @ 6.5A, 10V
  • Suitable for: use in N-Channel polarity applications
  • Drive Voltage: 10V
  • Supply and demand status: balanced.

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