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MT3S111(TE85L,F) Toshiba Semiconductor and Storage MT3S111(TE85L,F) label picture MT3S111(TE85L,F) real image
Same model may have multiple batches, images only for reference.
MT3S111(TE85L,F) Toshiba Semiconductor and Storage MT3S111(TE85L,F) label picture MT3S111(TE85L,F) real image
MT3S111(TE85L,F) Toshiba Semiconductor and Storage MT3S111(TE85L,F) label picture MT3S111(TE85L,F) real image
Same model may have multiple batches, images only for reference.

MT3S111(TE85L,F)

Part No MT3S111(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans RF BJT NPN 6V 0.1A 160mW 3-Pin S-Mini Reel | RF TRANS NPN 6V 11.5GHZ SMINI
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Maximum) 6V
Frequency - Transition 11.5GHz
Noise Figure (dB Typ at f) 1.2dB at 1GHz
Gain 12dB
Maximum Power 700mW
DC Current Gain (hFE) (Minimum) at Ic, Vce 200 at 30mA, 5V
Current - Collector (Ic) (Maximum) 100mA
Temperature Range - Operating 150°C
Mounting Style SMD
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 725521-MT3S111(TE85L,F)
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name MT3S111
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian MT3S111(TE85L,F) CAD Model

Description

The Toshiba MT3S111 NPN transistor is a high-frequency device with a transition frequency of 11.5GHz.

  • Transition Frequency: 11.5GHz
  • Gain: 12dB
  • Maximum Collector Current: 100mA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Mounting: Surface mount technology
  • Suitable for: Discrete semiconductor products
  • Temperature Range: -55°C to 150°C
  • Popularity: High
  • Supply and Demand Status: Balanced

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