The MT3S113TU(TE85L) is a Schottky Barrier Diode manufactured by Toshiba Semiconductor and Storage. This diode is designed for high-speed switching applications, offering low forward voltage drop and fast reverse recovery time. These characteristics make it suitable for rectification, voltage clamping, and other applications where efficiency and speed are critical.

Applications:

• High-frequency rectification
• Voltage clamping
• Freewheeling diodes
• Reverse polarity protection
• Switch-mode power supplies (SMPS)

Features:

• Low forward voltage drop
• Fast reverse recovery time
• High surge current capability
• Small surface mount package
• RoHS compliant

Benefits:

• High efficiency due to low forward voltage drop
• Reduced power loss and heat generation
• Improved system performance
• Compact design for space-constrained applications
• Environmentally friendly

Technical Specifications:

The MT3S113TU(TE85L) typically features a forward voltage drop (Vf) of around 0.3V to 0.5V at the rated forward current. The reverse recovery time (trr) is typically in the nanosecond range. The maximum repetitive peak reverse voltage (Vrrm) is typically around 30V. The average forward current (If) rating is around 1A to 3A, depending on the specific model. It is available in a small surface-mount package such as a SOD-323 or similar. The operating temperature range is typically -40°C to +125°C.

The Toshiba Semiconductor and Storage MT3S113TU(TE85L) Schottky Barrier Diode is a high-performance device ideal for applications requiring fast switching and low forward voltage drop. Its compact size and robust design make it a suitable choice for modern electronic systems.