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Same model may have multiple batches, images only for reference.
RN1101ACT(TPL3) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1101ACT(TPL3)

Part No RN1101ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W CST3
Datasheet
RN1101ACT(TPL3) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 150mV @ 500μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package CST3
Win Source Part Number 098848-RN1101ACT(TPL3)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1101ACT(TPL3) CAD Model

Description

The RN1101ACT(TPL3) is a pre-biased NPN transistor manufactured by Toshiba Semiconductor and Storage.

  • Type: pre-biased NPN transistor
  • Category: discrete semiconductor product
  • Status: obsolete (EOL)
  • Maximum Current Collector: 80mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW
  • Typical Gain (hFE): 30 @ 10mA, 5V
  • Package: CST3
  • Popularity: medium
  • Supply and Demand: sufficient

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