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RN1101MFV,L3F

Name: RN1101MFV,L3F
Brand: Toshiba Semiconductor and Storage
SKU: 296837
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	RN1101MFV,L3F
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS NPN 50V SOT723
Datasheet	RN1101MFV,L3F Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Active
Transistor Polarity	NPN - Pre-Biased
Maximum Current Collector	100mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	4.7k
Resistor - Emitter Base (R2) (Ohms)	4.7k
Typical Gain (hFE) (Min)	30 @ 10mA, 5V
Max Vce (sat)	300mV @ 500μA, 5mA
Collector Cut-off Current(Max)	500nA
Maximum Power Dissipation	150mW
Mounting	SMD (SMT)
Case / Package	VESM
Win Source Part Number	183534-RN1101MFV,L3F
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian RN1101MFV,L3F CAD Model

Alternative Products

Description

The RN1101MFV,L3F NPN pre-biased transistor from Toshiba Semiconductor and Storage is a part of the discrete semiconductor products category.

Category: discrete semiconductor products
Case/Package: VESM
Maximum Collector-Emitter Breakdown Voltage: 50V
Maximum Current Collector: 100mA
Typical Gain: 30 @ 10mA and 5V
Collector Cut-off Current: 500nA
Maximum Power Dissipation: 150mW
Supply and Demand Status: balanced

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