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RN1102F(TPL3,F)

Part No RN1102F(TPL3,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Category Discrete Semiconductor Products
Family Transistors(BJT) - Single,Pre - Biased
Win Source Part Number 183538-RN1102F(TPL3,F)
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1102F(TPL3,F) CAD Model

Description

The RN1102F(TPL3,F) is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for high-frequency amplification and switching applications. It features a low collector-emitter saturation voltage and high transition frequency, making it suitable for RF and high-speed digital circuits. The (TPL3,F) suffix indicates specific packaging and taping options for automated assembly and likely denotes lead-free compliance.

Applications:

  • High-frequency amplifiers: Used in RF amplifiers for communication devices and instrumentation.
  • Oscillators: Employed in oscillator circuits to generate stable signals at various frequencies.
  • Mixers: Utilized in mixer circuits to convert signals from one frequency to another.
  • Switching circuits: Used as a switch in high-speed digital circuits and power supplies.
  • Small signal amplification: Employed in preamplifiers and signal conditioning circuits.

Features:

  • Low collector-emitter saturation voltage: Minimizes power dissipation in switching applications.
  • High transition frequency: Enables high-speed operation in RF and digital circuits.
  • Small signal current gain (hFE): Provides sufficient gain for amplification purposes.
  • Epitaxial planar structure: Offers improved performance and reliability.
  • Surface mount package: Allows for automated assembly and compact designs.

Benefits:

  • Efficient switching: Low saturation voltage reduces power loss and improves efficiency.
  • High-speed performance: High transition frequency enables operation in high-frequency circuits.
  • Stable operation: Epitaxial planar structure ensures stable and reliable performance.
  • Compact design: Surface mount package allows for space-saving designs.
  • Easy assembly: Surface mount package simplifies manufacturing processes.

Additional Details:

The RN1102F(TPL3,F) typically features a collector-emitter voltage (VCEO) of 50V, a collector current (IC) of 150mA, and a power dissipation (PC) of 150mW. The transition frequency (fT) is around 300 MHz. It is housed in a small surface mount package, such as a SOT-23 or similar, facilitating high-density mounting on PCBs. The (TPL3,F) suffix details the taping and reel specifications for automated assembly, with 'F' likely indicating lead-free compliance. This device is well-suited for applications requiring efficient, high-speed, and reliable performance, such as portable devices and wireless communication systems. The TPL3 likely denotes a specific tape and reel configuration.

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