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Same model may have multiple batches, images only for reference.
RN1104 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1104

Part No RN1104
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 50V 100MA SSM
Datasheet
RN1104 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 183546-RN1104
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1104 CAD Model

Description

The Toshiba Semiconductor and Storage NPN transistor is a high-performance electronic component that is designed to provide reliable performance.

  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Temperature Range: -40°C to 125°C
  • Mounting: surface mount technology (SMT)
  • Packaging: reel
  • Frequency Transition: 250MHz
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Type: active electronic component
  • Category: Discrete Semiconductor Products
  • Supply and Demand Status: sufficient

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850+ $0.0681 $57.8850
2,085+ $0.0554 $115.5090
3,195+ $0.0543 $173.4885
4,445+ $0.0520 $231.1400
5,685+ $0.0508 $288.7980
7,695+ $0.0450 $346.2750
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