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Same model may have multiple batches, images only for reference.
RN1107ACT(TPL3) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1107ACT(TPL3)

Part No RN1107ACT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W CST3
Datasheet
RN1107ACT(TPL3) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package CST3
Win Source Part Number 1092452-RN1107ACT(TPL3)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1107ACT(TPL3) CAD Model

Description

The Toshiba Semiconductor and Storage RN1107ACT(TPL3) is a Discrete Semiconductor Product manufactured by Toshiba Semiconductor and Storage.

  • Category: Discrete Semiconductor Product
  • Status: Active
  • Supply and Demand Status: Balanced
  • Transistor Type: NPN - Pre-Biased
  • Maximum Collector Current: 80mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 150mV @ 250μA, 5mA
  • Collector Cut-off Current(Max): 500nA
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
530+ $0.1097 $58.1410
1,285+ $0.0901 $115.7785
1,985+ $0.0873 $173.2905
2,740+ $0.0845 $231.5300
3,540+ $0.0817 $289.2180
4,735+ $0.0732 $346.6020
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Availability: 3,200 pieces
MOQ: 530 pcs
Order Increment : 1 pcs
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