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Same model may have multiple batches, images only for reference.
RN1108(T5L,F,T) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1108(T5L,F,T)

Part No RN1108(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W SSM
Datasheet
RN1108(T5L,F,T) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 1092453-RN1108(T5L,F,T)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1108(T5L,F,T) CAD Model

Description

The RN1108(T5L,F,T) is a NPN transistor manufactured by Toshiba Semiconductor and Storage.

  • Supply and Demand Status: Sufficient
  • Applications: Switching
  • Maximum Voltage Rating: 50V
  • On-State Resistance: 1.5kΩ
  • Maximum Current Rating: 100mA

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