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Same model may have multiple batches, images only for reference.
RN1109,LF(CT Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1109,LF(CT

Part No RN1109,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 100MW SSM
Datasheet
RN1109,LF(CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 1092454-RN1109,LF(CT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1109,LF(CT CAD Model

Description

The Toshiba Semiconductor and Storage RN1109,LF(CT) is a pre-biased NPN transistor that has a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V.

  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW
  • Typical Gain (hFE): 70 @ 10mA and 5V
  • Package: SSM
  • Mounting: SMD (SMT)
  • Supply and Demand Status: Sufficient

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