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Same model may have multiple batches, images only for reference.
RN1111,LF(CT Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1111,LF(CT

Part No RN1111,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W SSM
Datasheet
RN1111,LF(CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 1092456-RN1111,LF(CT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1111,LF(CT CAD Model

Description

The Toshiba Semiconductor and Storage RN1111,LF(CT) is a pre-biased NPN transistor with a frequency transition of 250MHz.

  • Frequency Transition: 250MHz
  • Mounting: SMD (SMT)
  • Base Resistor (R1): 10k ohms
  • Emitter Base Resistor (R2): None
  • Category: Discrete Semiconductor Product
  • Status: Active
  • Collector Current (Max): 100mA
  • VCEO: 50V
  • Vce (sat) (Max): 300mV @ 250μA, 5mA
  • Collector Cut-off Current (Max): 100nA (ICBO)
  • Gain (hFE) (Min): 120 @ 1mA, 5V
  • Power Dissipation (Max): 100mW
  • Supply and Demand: Sufficient

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