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Same model may have multiple batches, images only for reference.
RN1114,LF Real Image
Same model may have multiple batches, images only for reference.

RN1114,LF

Part No RN1114,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 50V 0.1A SSM
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz
Power - Max 100 mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SSM
Base Product Number RN1114
Standard Package 3,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 835611-RN1114,LF
Ultra Librarian 3D Model Ultra Librarian RN1114,LF CAD Model

Description

The 835611-RN1114,LF is a pre-biased NPN bipolar transistor in a SC-75, SOT-416 package.

  • Discrete Semiconductor Products Category: transistors
  • Maximum Power Rating: 100 mW
  • Voltage Breakdown: Up to 50 V
  • Maximum Collector Current: 100 mA
  • Transistor Type: NPN
  • Vce Saturation: 300mV @ 250μA base current and 5mA collector current
  • DC Current Gain: 50 @ 10mA collector current and 5V collector-emitter voltage
  • Transition Frequency: 250 MHz
  • Mounting: Surface mountable
  • Manufacturer: Toshiba Semiconductor and Storage
  • Product Status: Active
  • Moisture Sensitivity Level: 1 (unlimited)

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