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RN1119MFV (TL3

Part No RN1119MFV (TL3
Manufacturer Toshiba Semiconductor and Storage
Catalog Misc Products
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Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 835613-RN1119MFV (TL3
Ultra Librarian 3D Model Ultra Librarian RN1119MFV (TL3 CAD Model

Description

The RN1119MFV (TL3) is a silicon epitaxial planar type NPN transistor manufactured by Toshiba Semiconductor and Storage. It's designed for switching and amplification applications in electronic circuits. This small signal transistor offers a good balance between current gain and switching speed, making it suitable for various general-purpose applications.

Applications:

  • Switching circuits: Used as a switch in various electronic devices, such as inverters, converters, and digital logic circuits.
  • Amplification circuits: Employed in small-signal amplifiers for boosting weak signals in audio or other signal processing applications.
  • Driver stages: Can be used as a driver transistor for larger transistors or loads.
  • General-purpose circuit applications: Suitable for a wide array of general circuit applications.

Features:

  • NPN Transistor: An NPN transistor configuration allows for efficient current flow when the base is positively biased relative to the emitter.
  • Small Signal Transistor: Optimized for low to medium current and voltage applications.
  • Surface Mount Device (SMD): Designed for automated assembly and high-density circuit board mounting.

Benefits:

  • Efficient Switching: Provides quick switching times for digital and control applications.
  • Signal Amplification: Allows effective amplification of small electrical signals.
  • Compact Size: The small form factor enables high-density board designs.
  • Easy Assembly: SMD package simplifies automated board assembly processes.

The RN1119MFV (TL3) transistor offers a collector-emitter voltage (VCEO) and collector current (IC) suitable for small signal applications. Precise electrical characteristics, such as current gain (hFE) and saturation voltages, are defined in the product datasheet, ensuring reliable and predictable circuit behavior. This transistor is commonly used in a wide range of consumer electronics, industrial controls, and communication equipment.

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