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RN1306,LF

Part No RN1306,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.1W USM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 097013-RN1306,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1306,LF CAD Model

Description

The Toshiba Semiconductor and Storage RN1306,LF is an NPN-pre-biased transistor that operates @ a frequency transition of 250MHz.

  • Transistor Polarity: NPN
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Resistor-Base (R1): 4.7k ohms
  • Resistor-Emitter Base (R2): 47k ohms
  • Category: Discrete semiconductor products
  • Status: Active
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
660+ $0.0758 $50.0280
1,610+ $0.0622 $100.1420
2,495+ $0.0602 $150.1990
3,435+ $0.0583 $200.2605
4,435+ $0.0564 $250.1340
5,945+ $0.0505 $300.2225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 155,800 pieces
MOQ: 660 pcs
Order Increment : 1 pcs
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