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Same model may have multiple batches, images only for reference.
RN1312(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1312(TE85L,F)

Part No RN1312(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.15W USM
Datasheet
RN1312(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 102698-RN1312(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1312(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage electronic component with Id 304136 is an active product with a medium popularity.

  • It comes in: USM packaging and can be mounted using SMD (SMT) technology.
  • The transistor polarity is: NPN-pre-biased, and it has a maximum collector-emitter breakdown voltage of 50V.
  • The maximum power dissipation is: 150mW.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $14.0148 $70.0740
11+ $11.4992 $126.4912
16+ $11.1400 $178.2400
22+ $10.7808 $237.1776
28+ $10.4216 $291.8048
38+ $9.3440 $355.0720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,500 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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