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Same model may have multiple batches, images only for reference.
RN1401T5LFT
Same model may have multiple batches, images only for reference.

RN1401T5LFT

Part No RN1401T5LFT
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans Digital BJT NPN 50V 100mA 3-Pin S-Mini T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-236-3
Collector Emitter Breakdown Voltage 50 V
Collector Emitter Voltage (VCEO) 50 V
Element Configuration Single
Max Collector Current 100 mA
Maximum Operating Temperature 150 °C
Max Power Dissipation 200 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
Packaging Tape and Reel
Polarity NPN
Radiation Hardening No
RoHS Compliant
Transition Frequency 250 MHz
Win Source Part Number 1088707-RN1401T5LFT
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian RN1401T5LFT CAD Model

Description

The RN1401T5LFT is a NPN RF transistor from Toshiba Semiconductor and Storage, with a Collector Emitter Voltage (VCEO) of 50 V and a maximum collector current of 100 mA.

  • Collector Emitter Voltage (VCEO): 50 V
  • Maximum collector current: 100 mA
  • Transition Frequency: 250 MHz
  • Maximum Power Dissipation: 200 mW
  • Case/Package: TO-236-3
  • Mounting Type: Surface Mount
  • RoHS: Compliant
  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • Applications: RF Transistors(BJT)

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