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RN1424 TE85L,F

Name: RN1424 TE85L,F
Brand: Toshiba Semiconductor and Storage
SKU: 297037
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	RN1424 TE85L,F
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Single, Pre - Biased
Description	TRANS PREBIAS NPN 200MW SMINI
Datasheet	RN1424 TE85L,F Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Active
Transistor Polarity	NPN - Pre-Biased
Maximum Current Collector	800mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	10k
Resistor - Emitter Base (R2) (Ohms)	10k
Typical Gain (hFE) (Min)	90 @ 100mA, 1V
Max Vce (sat)	250mV @ 1mA, 50mA
Collector Cut-off Current(Max)	500nA
Frequency - Transition	300MHz
Maximum Power Dissipation	200mW
Mounting	SMD (SMT)
Case / Package	S-Mini
Win Source Part Number	210833-RN1424 TE85L,F
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian RN1424 TE85L,F CAD Model

Alternative Products

Description

This NPN - Pre-Biased transistor with a frequency transition of 300MHz is manufactured by Toshiba Semiconductor and Storage. It has a maximum current collector of 800mA and a collector-emitter breakdown voltage of 50V. This component is mounted in SMD (SMT) packaging and has limited supply and demand status.

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
14+	$4.2238	$59.1332
34+	$3.4662	$117.8508
52+	$3.3576	$174.5952
72+	$3.2490	$233.9280
92+	$3.1416	$289.0272
124+	$2.8159	$349.1716

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 29,000 pieces

MOQ: 14 pcs

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