The RN1902FE is a general-purpose transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for switching and amplification applications in a wide range of electronic circuits. It features a low saturation voltage and high current gain, making it suitable for efficient and reliable operation.

Applications

• Switching Circuits
• Amplifier Circuits
• Inverter Circuits
• Driver Circuits
• General Purpose Applications

Features

• NPN Transistor
• Surface Mount Package: SOT-23
• Collector-Emitter Voltage (VCEO): 50V
• Collector Current (IC): 0.15A
• Low Saturation Voltage
• High Current Gain (hFE)

Benefits

• Efficient Switching: Low saturation voltage minimizes power loss.
• High Amplification: Provides good current gain for amplifier applications.
• Compact Design: Surface-mount package saves board space.
• Versatile Application: Suitable for a variety of switching and amplification needs.

Technical Specifications

The RN1902FE is an NPN transistor with a collector-emitter voltage (VCEO) of 50V and a collector current (IC) of 0.15A. It is available in a SOT-23 surface-mount package. The DC current gain (hFE) is typically in the range of 100 to 300, ensuring good amplification performance.