The RN1904FE (TE85L,F) is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for switching and amplification applications, offering a combination of high gain and low saturation voltage, making it suitable for various electronic circuits. The 'TE85L,F' suffix indicates specific packaging and lead-free compliance details.

Applications

• High-speed switching circuits
• Amplification in audio and RF stages
• Load switching
• Inverter circuits
• Driver stages for other electronic components

Features

• NPN Silicon Epitaxial Planar Transistor
• Low saturation voltage
• High DC current gain (hFE)
• Fast switching speed
• Lead-free package

Benefits

• Efficient switching performance reduces power loss.
• High gain allows for effective signal amplification.
• Low saturation voltage ensures minimal voltage drop across the transistor when conducting.
• Suitable for high-density mounting due to its compact package.
• Environmentally friendly due to its lead-free construction.

Additional Details

The RN1904FE boasts a collector-emitter voltage (VCEO) of typically around 50V, with a collector current (IC) rating usually in the range of 100-200mA. The DC current gain (hFE) can range from 100 to 300, depending on the operating conditions. The transition frequency (fT) is generally in the MHz range, making it suitable for relatively high-speed applications. The package type is typically a surface-mount package, such as a SOT-23 or similar, for automated assembly.

This transistor finds common use in a variety of consumer electronics, industrial controls, and communication equipment, where reliable and efficient switching performance is required. Always refer to the official Toshiba datasheet for precise electrical characteristics and application guidelines to ensure optimal performance and reliability in your specific circuit design.