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Same model may have multiple batches, images only for reference.
RN1906FE,LF(CT Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1906FE,LF(CT

Part No RN1906FE,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.1W ES6
Datasheet
RN1906FE,LF(CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1092479-RN1906FE,LF(CT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1906FE,LF(CT CAD Model

Description

This transistor has a frequency transition of 250MHz and is equipped with 2 NPN - pre-biased (dual) transistor polarity.

  • Frequency Transition: 250MHz
  • Transistor Polarity: 2 NPN - pre-biased (dual)
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW

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Quantity Unit Price Ext. Price
100+ $0.5856 $58.5600
245+ $0.4805 $117.7225
375+ $0.4655 $174.5625
515+ $0.4505 $232.0075
665+ $0.4354 $289.5410
890+ $0.3904 $347.4560
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