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Same model may have multiple batches, images only for reference.
RN1910FE,LF(CT Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1910FE,LF(CT

Part No RN1910FE,LF(CT
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.1W ES6
Datasheet
RN1910FE,LF(CT Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1092482-RN1910FE,LF(CT
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1910FE,LF(CT CAD Model

Description

The RN1910FE,LF(CT) is a dual NPN pre-biased transistor from Toshiba Semiconductor and Storage with a frequency transition of 250MHz.

  • Package: Surface mount ES6
  • Maximum Collector Current: 100mA
  • Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce(sat): 300mV @ 250μA and 5mA
  • Typical Gain (hFE): 120 @ 1mA and 5V
  • Maximum Power Dissipation: 100mW
  • Category: Discrete semiconductor products
  • Popularity: Popular

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