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RN1961FE(TE85L,F)

Name: RN1961FE(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: 297136
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	RN1961FE(TE85L,F)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Arrays, Pre - Biased
Description	TRANS 2NPN PREBIAS 0.1W ES6
Datasheet	RN1961FE(TE85L,F) Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Obsolete(EOL)
Transistor Polarity	2 NPN - Pre-Biased (Dual)
Maximum Current Collector	100mA
VCEO Maximum Collector-Emitter Breakdown Voltage	50V
Resistor - Base (R1) (Ohms)	4.7k
Resistor - Emitter Base (R2) (Ohms)	4.7k
Typical Gain (hFE) (Min)	30 @ 10mA, 5V
Max Vce (sat)	300mV @ 250μA, 5mA
Collector Cut-off Current(Max)	100nA (ICBO)
Frequency - Transition	250MHz
Maximum Power Dissipation	100mW
Mounting	SMD (SMT)
Case / Package	ES6
Win Source Part Number	027452-RN1961FE(TE85L,F)
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian RN1961FE(TE85L,F) CAD Model

Alternative Products

Description

The Toshiba RN1961FE(TE85L,F) is a dual NPN pre-biased transistor that comes with an ES6 case/package.

Designed for use in: discrete semiconductor products
Maximum Collector Current: 100mA
Collector-Emitter Breakdown Voltage: 50V
Maximum Vce(sat): 300mV @ 250μA, 5mA
Typical Gain (hFE): 30 @ 10mA, 5V
Maximum Power Dissipation: 100mW

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
2,085+	$0.0277	$57.7545
5,265+	$0.0219	$115.3035
7,895+	$0.0219	$172.9005
11,115+	$0.0208	$231.1920
13,890+	$0.0208	$288.9120
18,750+	$0.0185	$346.8750

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 52,000 pieces

MOQ: 2085 pcs

Order Increment : 1 pcs

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Expected Shipping Date	Ship today if order in (HKT)
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