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Same model may have multiple batches, images only for reference.
RN1966FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1966FE(TE85L,F)

Part No RN1966FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.1W ES6
Datasheet
RN1966FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1092484-RN1966FE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1966FE(TE85L,F) CAD Model

Description

The RN1966FE(TE85L,F) is a dual NPN transistor with a maximum collector-emitter breakdown voltage of 50V and a maximum power dissipation of 100mW.

  • Collector-Emitter Breakdown Voltage: 50V
  • Power Dissipation: 100mW
  • Gain: 80 @ 10mA and 5V
  • Type: pre-biased
  • Frequency Transition: 250MHz
  • Resistor-Base (R1): 4.7k
  • Resistor-Emitter Base (R2): 47k
  • Collector Cut-Off Current (max): 100nA (ICBO)
  • Package: ES6
  • Mounting: SMD (SMT)
  • Category: discrete semiconductor product
  • Status: obsolete (EOL)
  • Supply and Demand Status: sufficient

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225+ $0.7808 $175.6800
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530+ $0.6549 $347.0970
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