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Same model may have multiple batches, images only for reference.
RN2101,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2101,LF

Part No RN2101,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.1W SSM
Datasheet
RN2101,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 30 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 097854-RN2101,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2101,LF CAD Model

Description

The Toshiba RN2101,LF is a PNP pre-biased transistor designed for use in various applications.

  • Frequency Transition: 200MHz
  • Package: SSM
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Collector Cut-Off Current: 500nA
  • Typical Gain (hFE) (Min): 30 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW
  • Packaging: Tape and reel
  • Mounting: Surface mountable

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