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RN2106(T5L,F,T)

Part No RN2106(T5L,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.1W SSM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package SSM
Win Source Part Number 115012-RN2106(T5L,F,T)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2106(T5L,F,T) CAD Model

Description

The Toshiba RN2106(T5L,F,T) is a PNP pre-biased transistor with a frequency transition of 200MHz.

  • Frequency Transition: 200MHz
  • Resistor-Base (R1): 4.7k
  • Resistor-Emitter Base (R2): 47k
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW
  • Collector Cut-Off Current (max): 500nA
  • Typical Gain (hFE) (min): 80 @ 10mA, 5V
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Category: Discrete semiconductor products
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8420 $58.9400
170+ $0.6907 $117.4190
260+ $0.6687 $173.8620
360+ $0.6480 $233.2800
465+ $0.6260 $291.0900
620+ $0.5613 $348.0060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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