The Toshiba Semiconductor and Storage Transistors - Bipolar (BJT) - Arrays, Pre-Biased 105213-RN2702JE(TE85L,F) is a high-quality electronic component that is part of the discrete semiconductor products category.

• Family: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
• Package: Reel
• Mounting Technology: SMD/SMT
• Package: SOT-553
• Manufacturer Device Package: ESV
• Maximum Power: 100mW
• Voltage - Collector Emitter Breakdown (max): 50V
• Current - Collector (Ic) (max): 100mA
• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250μA, 5mA
• Current - Collector Cutoff (max): 100nA (ICBO)
• DC Current Gain (hFE) (min) @ Ic, Vce: 50 @ 10mA, 5V
• Frequency - Transition: 200MHz
• Resistor - Base (R1) (ohms): 10k
• Resistor - Emitter Base (R2) (ohms): 10k
• Supply and Demand Status: Balanced