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Same model may have multiple batches, images only for reference.
RN2310,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2310,LF

Part No RN2310,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.1W USM
Datasheet
RN2310,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 104840-RN2310,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2310,LF CAD Model

Description

This electronic component is a PNP pre-biased transistor manufactured by Toshiba Semiconductor and Storage.

  • Win Source Part Number: 104840-RN2310,LF
  • Package: Reel-TR
  • Mounting: SMD (SMT)
  • Category: Discrete Semiconductor Products
  • Frequency Transition: 200MHz
  • Supply and Demand Status: balanced
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE): 120 @ 1mA, 5V

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