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Same model may have multiple batches, images only for reference.
RN2312(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2312(TE85L,F)

Part No RN2312(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.1W USM
Datasheet
RN2312(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package USM
Win Source Part Number 113762-RN2312(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2312(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN2312(TE85L,F) is a PNP pre-biased transistor that is designed for use in a variety of applications.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 100mA
  • Typical Gain: 120 @ 1mA and 5V
  • Collector Cut-Off Current: 100nA
  • Maximum Power Dissipation: 100mW
  • Package: USM
  • Mounting: SMD (SMT) technology
  • Frequency Transition: 200MHz
  • Maximum Vce(sat): 300mV @ 250μA and 5mA
  • Resistor-Base (R1): 22k ohms
  • Resistor-Emitter Base (R2): not specified
  • Product Category: Discrete Semiconductor Products
  • Status: currently active
  • Supply and Demand Status: balanced

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