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Same model may have multiple batches, images only for reference.
RN2904FE,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2904FE,LF

Part No RN2904FE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ES6
Datasheet
RN2904FE,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 099413-RN2904FE,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN2904FE,LF CAD Model

Description

This electronic component is also manufactured by Toshiba Semiconductor and Storage and has a Win Source Part Number of 099413-RN2904FE,LF.

  • Product Type: Discrete Semiconductor Product
  • Status: Currently active
  • Supply and Demand: Sufficient
  • Frequency-Transition: 200MHz
  • Maximum Current Collector: 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 100mW
  • Collector Cut-off Current(Max): 500nA
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • Transistor Polarity: 2 PNP - Pre-Biased (Dual)
  • Case / Package: ES6

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